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FeFET Model

Reference

S. Deng et al., "A Comprehensive Model for Ferroelectric FET Capturing the Key Behaviors: Scalability, Variation, Stochasticity, and Accumulation," 2020 IEEE Symposium on VLSI Technology, 2020, pp. 1-2, doi: 10.1109/VLSITechnology18217.2020.9265014.

Parameters

  • width = 1u // channel width (cm)
  • length = 1u // channel length (cm)
  • vfb = 0 // flat band voltage
  • tfe = 0.8u // ferroelectric thickness (cm)
  • til = 0.1u // interlayer thickness (cm)
  • na = 3e17 // substrate doping
  • epiv = 8.85e-14 // Vacuum permittivity
  • epis = 11.8 // relative permittivity of silicon
  • epio = 3.9
  • a = 2.3 // gaussian distribution generated for domain electric field
  • b = 0.4 // gaussian distribution generated
  • p = 0.6775 // not used currently
  • q = 0.8115 // not used currently
  • Pr = 25 // Polarization C/cm2
  • tauo = 1.9e-8 // parameter for switching time, s
  • alpha = 3.0 // parameter for switching probability
  • beta = 2 // parameter for switching probability
  • epife = 28 // relative permittivity of ferroelectric
  • miu = 50 // MOSFET surface mobility
  • TIMELIMIT = 1e9 // time limit of switching
  • ndom = 20 // number of domains
  • seed0 = 1 // seed for random number